ps-laser scribing of CIGS films at different wavelengths
Identifieur interne : 003555 ( Main/Repository ); précédent : 003554; suivant : 003556ps-laser scribing of CIGS films at different wavelengths
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Abstract
Continuous growth of the thin-film electronics market stimulates the development of versatile technologies for large-scale patterning of thin-film materials on rigid and flexible substrates, and laser technologies are a promising method to accomplish the scribing processes. Lasers with picosecond pulse duration were applied in scribing of complex multilayered CuInxGa(1 - x)Se2 (CIGS) solar cells deposited on a polyimide substrate. The ablative properties of the films were examined as a function of the wavelength of laser radiation, pulse energy, and the irradiation dose. The selective removal of ITO and CIGS layers was achieved with 355 nm irradiation without any significant damage to the underlying layers in the ITO/CIGS/Mo/PI solar cell system. The 355 nm wavelength was also found to be favorable for scribing of absorber layer in a ZnO/CIGS/Mo/PI solar cell system. 266 nm radiation significantly modified the film structure due to high absorption. Extensive melt formation in the CIGS layer was found when 532 nm radiation was applied, though the trenches were smooth and crack-free.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">ps-laser scribing of CIGS films at different wavelengths</title><author><name sortKey="Gecys, P" uniqKey="Gecys P">P. Gecys</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Applied Research, Center for Physical Science and Technology, Savanoriu Ave. 231</s1><s2>02300 Vilnius</s2><s3>LTU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Lituanie</country><wicri:noRegion>02300 Vilnius</wicri:noRegion></affiliation></author><author><name sortKey="Raciukaitis, G" uniqKey="Raciukaitis G">G. Raciukaitis</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Applied Research, Center for Physical Science and Technology, Savanoriu Ave. 231</s1><s2>02300 Vilnius</s2><s3>LTU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Lituanie</country><wicri:noRegion>02300 Vilnius</wicri:noRegion></affiliation></author><author><name sortKey="Ehrhardt, M" uniqKey="Ehrhardt M">M. Ehrhardt</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Leibniz-Institute for Surface Modification, Permoserstr. 15</s1><s2>04318 Leipzig</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="Zimmer, K" uniqKey="Zimmer K">K. Zimmer</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Leibniz-Institute for Surface Modification, Permoserstr. 15</s1><s2>04318 Leipzig</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Saxe (Land)</region><region type="district" nuts="2">District de Leipzig</region><settlement type="city">Leipzig</settlement></placeName></affiliation></author><author><name sortKey="Gedvilas, M" uniqKey="Gedvilas M">M. Gedvilas</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratory for Applied Research, Center for Physical Science and Technology, Savanoriu Ave. 231</s1><s2>02300 Vilnius</s2><s3>LTU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Lituanie</country><wicri:noRegion>02300 Vilnius</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0023346</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 11-0023346 INIST</idno><idno type="RBID">Pascal:11-0023346</idno><idno type="wicri:Area/Main/Corpus">003861</idno><idno type="wicri:Area/Main/Repository">003555</idno></publicationStmt><seriesStmt><idno type="ISSN">0947-8396</idno><title level="j" type="abbreviated">Appl. phys., A Mater. sci. process. : (Print)</title><title level="j" type="main">Applied physics. A, Materials science & processing : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Copper Gallium Indium Selenides Mixed</term><term>Cracks</term><term>Laser beam machining</term><term>Laser pulse</term><term>Micromachining</term><term>Patterning</term><term>Radiation effects</term><term>Solar cells</term><term>Thin films</term><term>Trench technology</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Formation motif</term><term>Impulsion laser</term><term>Cellule solaire</term><term>Usinage laser</term><term>Effet rayonnement</term><term>Fissure</term><term>Microusinage</term><term>Cuivre Gallium Indium Séléniure Mixte</term><term>Technologie tranchée</term><term>Couche mince</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Continuous growth of the thin-film electronics market stimulates the development of versatile technologies for large-scale patterning of thin-film materials on rigid and flexible substrates, and laser technologies are a promising method to accomplish the scribing processes. Lasers with picosecond pulse duration were applied in scribing of complex multilayered CuIn<sub>x</sub>Ga<sub>(1 - x)</sub>Se<sub>2</sub> (CIGS) solar cells deposited on a polyimide substrate. The ablative properties of the films were examined as a function of the wavelength of laser radiation, pulse energy, and the irradiation dose. The selective removal of ITO and CIGS layers was achieved with 355 nm irradiation without any significant damage to the underlying layers in the ITO/CIGS/Mo/PI solar cell system. The 355 nm wavelength was also found to be favorable for scribing of absorber layer in a ZnO/CIGS/Mo/PI solar cell system. 266 nm radiation significantly modified the film structure due to high absorption. Extensive melt formation in the CIGS layer was found when 532 nm radiation was applied, though the trenches were smooth and crack-free.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0947-8396</s0></fA01><fA03 i2="1"><s0>Appl. phys., A Mater. sci. process. : (Print)</s0></fA03><fA05><s2>101</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>ps-laser scribing of CIGS films at different wavelengths</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Laser Processing</s1></fA09><fA11 i1="01" i2="1"><s1>GECYS (P.)</s1></fA11><fA11 i1="02" i2="1"><s1>RACIUKAITIS (G.)</s1></fA11><fA11 i1="03" i2="1"><s1>EHRHARDT (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>ZIMMER (K.)</s1></fA11><fA11 i1="05" i2="1"><s1>GEDVILAS (M.)</s1></fA11><fA12 i1="01" i2="1"><s1>KANE (D.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Laboratory for Applied Research, Center for Physical Science and Technology, Savanoriu Ave. 231</s1><s2>02300 Vilnius</s2><s3>LTU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Leibniz-Institute for Surface Modification, Permoserstr. 15</s1><s2>04318 Leipzig</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>373-378</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16194A</s2><s5>354000193957310260</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>19 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0023346</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics. A, Materials science & processing : (Print)</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>Continuous growth of the thin-film electronics market stimulates the development of versatile technologies for large-scale patterning of thin-film materials on rigid and flexible substrates, and laser technologies are a promising method to accomplish the scribing processes. Lasers with picosecond pulse duration were applied in scribing of complex multilayered CuIn<sub>x</sub>Ga<sub>(1 - x)</sub>Se<sub>2</sub> (CIGS) solar cells deposited on a polyimide substrate. The ablative properties of the films were examined as a function of the wavelength of laser radiation, pulse energy, and the irradiation dose. The selective removal of ITO and CIGS layers was achieved with 355 nm irradiation without any significant damage to the underlying layers in the ITO/CIGS/Mo/PI solar cell system. The 355 nm wavelength was also found to be favorable for scribing of absorber layer in a ZnO/CIGS/Mo/PI solar cell system. 266 nm radiation significantly modified the film structure due to high absorption. Extensive melt formation in the CIGS layer was found when 532 nm radiation was applied, though the trenches were smooth and crack-free.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A65</s0></fC02><fC02 i1="02" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="03" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Formation motif</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Patterning</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Impulsion laser</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Laser pulse</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Impulsión láser</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Cellule solaire</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Solar cells</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Usinage laser</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Laser beam machining</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Effet rayonnement</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Radiation effects</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Fissure</s0><s5>08</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Cracks</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Microusinage</s0><s5>09</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Micromachining</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Cuivre Gallium Indium Séléniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Copper Gallium Indium Selenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Technologie tranchée</s0><s5>12</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Trench technology</s0><s5>12</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Tecnología trinchera</s0><s5>12</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Couche mince</s0><s5>18</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Thin films</s0><s5>18</s5></fC03><fN21><s1>010</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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